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BYT51.
Vishay Telefunken
Silicon Mesa Rectifiers
Features
D Glass passivated junction D Hermetically sealed package D Low reverse current
Applications
Rectifiers
94 9539
Absolute Maximum Ratings
Tj = 25_C Parameter Reverse voltage g =Repetitive peak reverse voltage Test Conditions Type BYT51A BYT51B BYT51D BYT51G BYT51J BYT51K BYT51M Symbol VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM IFSM IFRM IFAV IFAV Tj=Tstg Value 50 100 200 400 600 800 1000 50 9 1 1.5 -65...+175 Unit V V V V V V V A A A A C
Peak forward surge current Repetitive peak forward current Average forward current g Junction and storage temperature range
tp=10ms, half sinewave on PC board l=10mm, TL=30C
Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions l=10mm, TL=constant on PC board with spacing 25mm Symbol RthJA RthJA Value 45 100 Unit K/W K/W
Document Number 86028 Rev. 3, 24-Jun-98
www.vishay.de * FaxBack +1-408-970-5600 1 (4)
BYT51.
Vishay Telefunken Electrical Characteristics
Tj = 25_C Parameter Forward voltage g Reverse current Reverse recovery time Test Conditions IF=1A IF=1A, Tj=175C VR=VRRM VR=VRRM, Tj=150C IF=0.5A, IR=1A, iR=0.25A Type Symbol VF VF IR IR trr Min Typ 0.95 Max 1.1 1.0 1 100 4 Unit V V
mA mA ms
Characteristics (Tj = 25_C unless otherwise specified)
R thJA - Therm. Resist. Junction / Ambient ( K/W ) 120 l 100 80 60 40 20 0 0 5 10 15 20 25 30
94 9405
l
I FAV- Average Forward Current ( A )
2.0 1.6 1.2 0.8 0.4 0 0 40 80 120 160 200 VR = VR RM fv1kHz l=10mm
TL=constant
94 9101
l - Lead Length ( mm )
Tamb - Ambient Temperature ( C )
Figure 1. Typ. Thermal Resistance vs. Lead Length
Figure 3. Max. Average Forward Current vs. Ambient Temperature
1000
I FAV- Average Forward Current ( A )
2.0 I R - Reverse Current ( mA ) 1.6 1.2 0.8 0.4 0 0 40 80 120 160 200
94 9407
VR = VR RM fv1kHz PC Board
100 Scattering Limit 10
1 VR = VR RM 0 40 80 120 160 200
0.1 Tamb - Ambient Temperature ( C )
94 9406
Tj - Junction Temperature ( C )
Figure 2. Max. Average Forward Current vs. Ambient Temperature
Figure 4. Reverse Current vs. Junction Temperature
www.vishay.de * FaxBack +1-408-970-5600 2 (4)
Document Number 86028 Rev. 3, 24-Jun-98
BYT51.
Vishay Telefunken
10 CD - Diode Capacitance ( pF ) 3.0
15767
50 40 30 20 10 0 0.1
IF - Forward Current ( A )
Tj = 25C 1
Scattering Limit 0.1
0.01 0
94 9408
0.6
1.2
1.8
2.4
1.0
10.0
100.0
VF - Forward Voltage ( V )
VR - Reverse Voltage ( V )
Figure 5. Forward Current vs. Forward Voltage
Figure 6. Typ. Diode Capacitance vs. Reverse Voltage
Dimensions in mm
3.6 max. Sintered Glass Case SOD 57 Weight max. 0.5 g Cathode Identification
technical drawings according to DIN specifications 94 9538
0.82 max.
26 min.
4.2 max.
26 min.
Document Number 86028 Rev. 3, 24-Jun-98
www.vishay.de * FaxBack +1-408-970-5600 3 (4)
BYT51.
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.de * FaxBack +1-408-970-5600 4 (4)
Document Number 86028 Rev. 3, 24-Jun-98

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